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MMUN2133LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 4.7 kohm, 47 kohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoMMUN2133LT1G
Order Code
Full Reel2317905
Re-Reel2317628RL
Cut Tape2317628
Your Part Number
947 In Stock
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947 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY0.657 | CNY3.28 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY0.657 (CNY0.7424) |
| 50+ | CNY0.531 (CNY0.600) |
| 100+ | CNY0.405 (CNY0.4576) |
| 500+ | CNY0.260 (CNY0.2938) |
| 1500+ | CNY0.255 (CNY0.2882) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.215 (CNY0.243) |
| 9000+ | CNY0.211 (CNY0.2384) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMUN2133LT1G
Order Code
Full Reel2317905
Re-Reel2317628RL
Cut Tape2317628
Technical Datasheet
Transistor PolaritySingle PNP
Digital Transistor PolaritySingle PNP
Collector Emitter Voltage V(br)ceo-50V
Collector Emitter Voltage Max NPN-
Continuous Collector Current Ic-100mA
Collector Emitter Voltage Max PNP50V
Continuous Collector Current100mA
Base Input Resistor R14.7kohm
Resistor Ratio, R1 / R210(Ratio)
Base Emitter Resistor R247kohm
Transistor Case StyleSOT-23
RF Transistor CaseSOT-23
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation400mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The MMUN2133LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
- Simplifies circuit design
- Reduces board space
- Reduces component count
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
Single PNP
Collector Emitter Voltage V(br)ceo
-50V
Continuous Collector Current Ic
-100mA
Continuous Collector Current
100mA
Resistor Ratio, R1 / R2
10(Ratio)
Transistor Case Style
SOT-23
No. of Pins
3 Pin
Power Dissipation
400mW
DC Current Gain hFE Min
80hFE
Qualification
-
MSL
-
Digital Transistor Polarity
Single PNP
Collector Emitter Voltage Max NPN
-
Collector Emitter Voltage Max PNP
50V
Base Input Resistor R1
4.7kohm
Base Emitter Resistor R2
47kohm
RF Transistor Case
SOT-23
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for MMUN2133LT1G
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033