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KSB772YSTU
Bipolar (BJT) Single Transistor, PNP, 30 V, 3 A, 10 W, TO-126, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoKSB772YSTU
Order Code2575353
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max30V
Continuous Collector Current3A
Power Dissipation10W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency80MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
- PNP epitaxial silicon transistor
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
3A
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
30V
Power Dissipation
10W
Transistor Mounting
Through Hole
Transition Frequency
80MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001591