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FQP2N90
Power MOSFET, N Channel, 900 V, 2.2 A, 5.6 ohm, TO-220AB, Through Hole
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP2N90Copy
Order Code2453441
Technical Datasheet
Channel TypeN Channel
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Product Range-
Qualification-
Alternatives for FQP2N90
1 Product Found
Product Overview
The FQP2N90 is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (12nC)
- Low Crss (5.5pF)
- 100% avalanche tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Transistor Mounting
Through Hole
Qualification
-
Transistor Case Style
TO-220AB
Product Range
-
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003629