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FQA46N15
Power MOSFET, N Channel, 150 V, 50 A, 0.033 ohm, TO-3PN, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFQA46N15Copy
Manufacturer Standard Lead Time58 weeks
Order Code2322622
Your Part Number
599 In Stock
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599 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY41.580 (CNY46.9854) |
| 10+ | CNY27.270 (CNY30.8151) |
| 100+ | CNY16.990 (CNY19.1987) |
| 500+ | CNY14.710 (CNY16.6223) |
| 1000+ | CNY14.420 (CNY16.2946) |
Price for:Each
Minimum: 1
Multiple: 1
CNY41.58 (CNY46.99 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQA46N15Copy
Manufacturer Standard Lead Time58 weeks
Order Code2322622
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id50A
Drain Source On State Resistance0.033ohm
Transistor Case StyleTO-3PN
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (17-Jan-2022)
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Product Overview
The FQA46N15 is a 150V N-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
- Low gate charge (typical 85nC)
- Low Crss (typical 100pF)
- 100% avalanche tested
- ±25V gate source voltage
- 40°C/W thermal resistance, junction to ambient
- 0.6°C/W thermal resistance, junction to case
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-3PN
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.033ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.007091