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FDME1024NZT
Dual MOSFET, N Channel, 20 V, 20 V, 3.8 A, 3.8 A, 0.066 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDME1024NZTCopy
Manufacturer Standard Lead Time29 weeks
Order Code
Re-Reel2083357RL
Cut Tape2083357
Your Part Number
918 In Stock
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918 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY9.360 | CNY9.36 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY9.360 (CNY10.5768) |
| 10+ | CNY5.320 (CNY6.0116) |
| 100+ | CNY3.720 (CNY4.2036) |
| 500+ | CNY3.070 (CNY3.4691) |
| 1000+ | CNY2.410 (CNY2.7233) |
| 5000+ | CNY2.020 (CNY2.2826) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDME1024NZTCopy
Manufacturer Standard Lead Time29 weeks
Order Code
Re-Reel2083357RL
Cut Tape2083357
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel3.8A
Continuous Drain Current Id P Channel3.8A
Drain Source On State Resistance N Channel0.066ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleµFET
No. of Pins6Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDME1024NZT is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
- Low profile
- Halogen-free
- ±8V Gate to source voltage
- 3.8A Continuous drain current
- 6A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
3.8A
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
3.8A
Drain Source On State Resistance N Channel
0.066ohm
Transistor Case Style
µFET
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000054