FDC6301N..
Dual MOSFET, N Channel, 25 V, 220 mA, 5 ohm
6,000 more incoming. You can reserve stock now
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY2.830 | CNY14.15 |
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.830 (CNY3.1979) |
| 50+ | CNY2.340 (CNY2.6442) |
| 100+ | CNY1.840 (CNY2.0792) |
| 500+ | CNY1.270 (CNY1.4351) |
| 1500+ | CNY1.250 (CNY1.4125) |
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.977 (CNY1.104) |
Product Information
Product Overview
The FDC6301N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. It is very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this N-channel FET's can replace several digital transistors, with a variety of bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- -0.5 to 8V Gate to source voltage
- 0.22A Continuous drain/output current
- 0.5A Pulsed drain/output current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
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-
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6Pins
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MSL 1 - Unlimited
25V
220mA
5ohm
SuperSOT
900mW
150°C
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No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate