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NTS4001NT1G
Power MOSFET, N Channel, 30 V, 270 mA, 1.5 ohm, SOT-323, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTS4001NT1G
Order Code
Re-Reel1453633RL
Cut Tape1453633
Your Part Number
31,374 In Stock
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14950 Next business day delivery available(Shanghai stock)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY0.905 | CNY4.52 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY0.905 (CNY1.0226) |
| 50+ | CNY0.740 (CNY0.8362) |
| 100+ | CNY0.575 (CNY0.6498) |
| 500+ | CNY0.413 (CNY0.4667) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTS4001NT1G
Order Code
Re-Reel1453633RL
Cut Tape1453633
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id270mA
Drain Source On State Resistance1.5ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4V
Gate Source Threshold Voltage Max1.2V
Power Dissipation330mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
NTS4001NT1G is a single N-channel small signal MOSFET. This device is AEC-Q101 qualified and PPAP capable. It is used in applications such as low-side load switch, Li-ion battery-supplied devices, cell phones, PDAs, DSC, buck converters, and level shifts.
- Low gate charge for fast switching
- ESD protected gate
- 270mA continuous drain current
- 800mA pulse drain current
- Drain-to-source breakdown voltage is 30V minimum at (VGS = 0V, ID = 100µA)
- Gate-to-source leakage current is ±1µA maximum at (VDS = 0V, VGS = ±10V)
- Input capacitance is 20pF typical at (VGS = 0V, f = 1.0MHz, VDS = 5.0V)
- Turn-on delay time is 17ns typical at (VGS = 4.5V, VDD = 5V, ID = 10mA, RG = 50 ohm)
- Gate threshold temperature coefficient is -3.4mV/°C typical at ((TJ = 25°C)
- Junction temperature range from -55°C to 150°C, SC-70 package
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
270mA
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4V
Power Dissipation
330mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
1.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005