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NTS2101PT1G
Power MOSFET, P Channel, 8 V, 1.4 A, 0.1 ohm, SOT-323, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTS2101PT1G
Order Code
Re-Reel1453612RL
Cut Tape1453612
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY2.330 | CNY11.65 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.330 (CNY2.6329) |
| 50+ | CNY1.980 (CNY2.2374) |
| 100+ | CNY1.640 (CNY1.8532) |
| 500+ | CNY1.170 (CNY1.3221) |
| 1500+ | CNY1.140 (CNY1.2882) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTS2101PT1G
Order Code
Re-Reel1453612RL
Cut Tape1453612
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id1.4A
Drain Source On State Resistance0.1ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation290mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTS2101PT1G is a P-channel Power MOSFET offers -8V drain source voltage and -1.4A continuous drain current. It is suitable for high side load switch, charging circuit, single cell battery applications such as cell phones, digital cameras and PDAs.
- Leading Trench technology for low RDS (ON) extending battery life
- -1.8V Rated for low voltage gate drive
- Surface-mount for small footprint (2 x 2mm)
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Portable Devices, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.4A
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Power Dissipation
290mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005