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NTJD4105CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT1GCopy
Order Code
Full Reel2317896
Re-Reel2464121RL
Cut Tape2464121
Your Part Number
3,030 In Stock
6,000 more incoming. You can reserve stock now
3,030 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY2.570 | CNY12.85 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.570 (CNY2.9041) |
| 50+ | CNY2.100 (CNY2.373) |
| 100+ | CNY1.630 (CNY1.8419) |
| 500+ | CNY0.953 (CNY1.0769) |
| 1500+ | CNY0.934 (CNY1.0554) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.641 (CNY0.7243) |
| 9000+ | CNY0.629 (CNY0.7108) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT1GCopy
Order Code
Full Reel2317896
Re-Reel2464121RL
Cut Tape2464121
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel630mA
Continuous Drain Current Id P Channel630mA
Drain Source On State Resistance N Channel0.29ohm
Drain Source On State Resistance P Channel0.29ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel270mW
Power Dissipation P Channel270mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTJD4105CT1G is a -8/20V P and N-channel Small Signal MOSFET designed with low RDS(on) for minimum footprint and increased circuit efficiency. The low RDS (on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras and PDAs.
- Complementary N and P channel device
- Leading -8V trench for low RDS(on) performance
- ESD protected gate- Class 1 ESD rating
- 460°C/W Thermal resistance, junction to ambient
Applications
Communications & Networking, Consumer Electronics, Computers & Computer Peripherals, Multimedia
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
630mA
Drain Source On State Resistance P Channel
0.29ohm
No. of Pins
6Pins
Power Dissipation P Channel
270mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
630mA
Drain Source On State Resistance N Channel
0.29ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
270mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Alternatives for NTJD4105CT1G
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006