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NTJD4001NT1G
Dual MOSFET, N Channel, 30 V, 250 mA, 1 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTJD4001NT1G
Order Code
Re-Reel1704019RL
Cut Tape1704019
Your Part Number
1,610 In Stock
12,000 more incoming. You can reserve stock now
1610 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.980 | CNY9.90 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.980 (CNY2.2374) |
| 50+ | CNY1.640 (CNY1.8532) |
| 100+ | CNY1.300 (CNY1.469) |
| 500+ | CNY0.831 (CNY0.939) |
| 1500+ | CNY0.815 (CNY0.921) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD4001NT1G
Order Code
Re-Reel1704019RL
Cut Tape1704019
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel250mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel272mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTJD4001NT1G is a dual N-channel small signal MOSFET designed for Li−Ion battery supplied devices like cell phones, PDAs and DSC. It is suitable for low side load switch, buck converters and level shift applications.
- Low gate charge for fast switching
- ESD protected gate
Applications
Industrial, Automotive, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
250mA
Drain Source On State Resistance N Channel
1ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
272mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for NTJD4001NT1G
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004581