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NTF2955T1G
Power MOSFET, P Channel, 60 V, 2.6 A, 0.17 ohm, SOT-223, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNTF2955T1G
Order Code
Re-Reel1453649RL
Cut Tape1453649
Your Part Number
30,379 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY11.290 | CNY11.29 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.290 (CNY12.7577) |
| 10+ | CNY7.160 (CNY8.0908) |
| 50+ | CNY5.250 (CNY5.9325) |
| 200+ | CNY4.780 (CNY5.4014) |
| 500+ | CNY4.310 (CNY4.8703) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTF2955T1G
Order Code
Re-Reel1453649RL
Cut Tape1453649
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.17ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Power Dissipation1W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management.
- Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A)
- Gate-to-source voltage is ±20V (TJ = 25°C)
- Continuous drain current is -2.6A (TJ = 25°C, steady state)
- Power dissipation is 2.3W (TJ = 25°C, steady state)
- Pulsed drain current is -17A (tp = 10µs, TJ = 25°C)
- Drain-to-source breakdown voltage is -60V min (VGS = 0V, ID = -250µA, TJ=25°C)
- Gate threshold voltage range from -2.0 to -4.0V (VGS = VDS, ID = -1.0mA, TJ=25°C)
- Forward transconductance is 1.77S typ (VGS = -15V, ID = -0.75A, TJ=25°C)
- Turn-on delay time is 11ns rtp (VGS = 10V, VDD = 25V, ID = 1.5A, RG = 9.1ohm, RL = 25ohm)
- SOT-223 package, operating junction range from -55 to 175°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.6A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
20V
Power Dissipation
1W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.17ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000124