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NSVF4017SG4T1G
Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 100 mA, SC-82FL
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ManufacturerONSEMI
Manufacturer Part NoNSVF4017SG4T1G
Order Code
Re-Reel2895761RL
Cut Tape2895761
Your Part Number
No Longer Manufactured
Packaging Options
Product Information
ManufacturerONSEMI
Manufacturer Part NoNSVF4017SG4T1G
Order Code
Re-Reel2895761RL
Cut Tape2895761
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max12V
Transition Frequency10GHz
Power Dissipation450mW
Continuous Collector Current100mA
Transistor Case StyleSC-82FL
No. of Pins4Pins
DC Current Gain hFE Min150hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (15-Jan-2018)
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Technical Specifications
Transistor Polarity
NPN
Transition Frequency
10GHz
Continuous Collector Current
100mA
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
12V
Power Dissipation
450mW
Transistor Case Style
SC-82FL
DC Current Gain hFE Min
150hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001