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NST3906F3T5G
Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 290 mW, SOT-1123, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNST3906F3T5G
Order Code
Re-Reel2533340RL
Cut Tape2533340
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY2.980 | CNY14.90 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.980 (CNY3.3674) |
| 10+ | CNY2.060 (CNY2.3278) |
| 100+ | CNY1.300 (CNY1.469) |
| 500+ | CNY0.816 (CNY0.9221) |
| 1000+ | CNY0.634 (CNY0.7164) |
| 5000+ | CNY0.534 (CNY0.6034) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNST3906F3T5G
Order Code
Re-Reel2533340RL
Cut Tape2533340
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max40V
Continuous Collector Current200mA
Power Dissipation290mW
Transistor Case StyleSOT-1123
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency250MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
NST3906F3T5G is a PNP general-purpose transistor. It is designed for general-purpose amplifier applications and is housed in the SOT−1123 surface-mount package. This device is ideal for low−power surface mount applications where board space is at a premium.
- Reduces board space
- Collector−emitter breakdown voltage (IC = 1.0mAdc, IB = 0) is -40V DC min
- Collector−base breakdown voltage (IC = 10µAdc, IE = 0) is -40V DC min
- Emitter−base breakdown voltage (IE = 10µAdc, IC = 0) is -5V DC min
- DC current gain is 60 at (IC = −0.1mAdc, VCE = −1.0V DC)
- Current−gain − bandwidth product (IC = 10mAdc, VCE = 20V DC, f = 100MHz) is 250MHz min
- Noise figure (VCE = −5.0V DC, IC = −100µAdc, RS = 1.0kohm, f = 1.0kHz) is 4.0dB max
- Delay time is 35ns max at (VCC = −3.0V DC, VBE = 0.5V DC)
- Rise time is 35ns max at (IC = −10mAdc, IB1 = −1.0mAdc)
- Junction and storage temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
200mA
Transistor Case Style
SOT-1123
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
40V
Power Dissipation
290mW
Transistor Mounting
Surface Mount
Transition Frequency
250MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005