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NDC7002N
Dual MOSFET, N Channel, 50 V, 510 mA, 2 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNDC7002N
Order Code
Re-Reel9844821RL
Cut Tape9844821
Your Part Number
58,838 In Stock
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58838 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY3.180 | CNY15.90 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY3.180 (CNY3.5934) |
| 50+ | CNY2.610 (CNY2.9493) |
| 100+ | CNY2.040 (CNY2.3052) |
| 500+ | CNY1.400 (CNY1.582) |
| 1500+ | CNY1.380 (CNY1.5594) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDC7002N
Order Code
Re-Reel9844821RL
Cut Tape9844821
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel50V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel510mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel2ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel700mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NDC7002N is a dual N-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.
- High saturation current
- High density cell design for low RDS (ON)
- Design using copper lead-frame for superior thermal and electrical capabilities
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
50V
Continuous Drain Current Id N Channel
510mA
Drain Source On State Resistance N Channel
2ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000016