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MUN5211DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm
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ManufacturerONSEMI
Manufacturer Part NoMUN5211DW1T1G
Order Code
Re-Reel2317633RL
Cut Tape2317633
Your Part Number
6,540 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.060 | CNY5.30 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.060 (CNY1.1978) |
| 50+ | CNY0.852 (CNY0.9628) |
| 100+ | CNY0.644 (CNY0.7277) |
| 500+ | CNY0.420 (CNY0.4746) |
| 1500+ | CNY0.412 (CNY0.4656) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMUN5211DW1T1G
Order Code
Re-Reel2317633RL
Cut Tape2317633
Technical Datasheet
Transistor PolarityDual NPN
Digital Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage V(br)ceo50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current Ic100mA
Continuous Collector Current100mA
Base Input Resistor R110kohm
Base Emitter Resistor R210kohm
Resistor Ratio, R1 / R21(Ratio)
RF Transistor CaseSOT-363
Transistor Case StyleSOT-363
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation385mW
Operating Temperature Max150°C
DC Current Gain hFE Min35hFE
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
- Simplifies circuit design
- Reduces board space
- Reduces component count
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max NPN
50V
Collector Emitter Voltage Max PNP
-
Continuous Collector Current
100mA
Base Emitter Resistor R2
10kohm
RF Transistor Case
SOT-363
No. of Pins
6 Pin
Power Dissipation
385mW
DC Current Gain hFE Min
35hFE
Qualification
-
MSL
-
Digital Transistor Polarity
Dual NPN
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
10kohm
Resistor Ratio, R1 / R2
1(Ratio)
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for MUN5211DW1T1G
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006