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MMBT3904LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 225 mW, SOT-23, Surface Mount
1,127,443 In Stock
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20875 Next business day delivery available(Shanghai stock)
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1018197 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY0.561 | CNY2.80 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY0.561 (CNY0.6339) |
| 50+ | CNY0.457 (CNY0.5164) |
| 100+ | CNY0.352 (CNY0.3978) |
| 500+ | CNY0.226 (CNY0.2554) |
| 1500+ | CNY0.222 (CNY0.2509) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.176 (CNY0.1989) |
| 9000+ | CNY0.173 (CNY0.1955) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT3904LT1G
Order Code
Full Reel2317804
Re-Reel1459100RL
Cut Tape1459100
Product RangeMMBTxxxx
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max40V
Continuous Collector Current200mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min300hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
QualificationAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor.
- Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0)
- Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
- Emitter-base breakdown voltage is 6.0VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
- Collector current - continuous is 900mAdc max (TA = 25°C)
- Total Device Dissipation FR-5 Board is 225mW max (TA = 25°C)
- Thermal resistance junction-to-ambient is 556°C/W max (TA = 25°C)
- Collector cutoff current is 50nAdc max (VCE = 30VDC, VEB = 3.0Vdc)
- Noise figure is 5.0dB max (VCE = 5.0VDC, IC = 100µADC, RS = 1.0kohm, f = 1.0KHz)
- SOT-416 package
- Junction temperature range from -65 to +150°C
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
200mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
300hFE
Product Range
MMBTxxxx
MSL
-
Collector Emitter Voltage Max
40V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
300MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.09