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FDT86113LZ
Power MOSFET, N Channel, 100 V, 3.3 A, 0.1 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDT86113LZ
Order Code
Re-Reel2083343RL
Cut Tape2083343
Your Part Number
4,479 In Stock
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300 Next business day delivery available(Shanghai stock)
4179 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY8.450 | CNY42.25 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY8.450 (CNY9.5485) |
| 50+ | CNY5.550 (CNY6.2715) |
| 250+ | CNY4.280 (CNY4.8364) |
| 1000+ | CNY3.870 (CNY4.3731) |
| 2000+ | CNY3.800 (CNY4.294) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDT86113LZ
Order Code
Re-Reel2083343RL
Cut Tape2083343
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id3.3A
Drain Source On State Resistance0.1ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation2.2W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FDT86113LZ is a N-channel Logic Level MOSFET produced using advanced PowerTrench® process. It has been special tailored to minimize the ON-state resistance and yet maintain superior switching performance. The G-S Zener has been added to enhance ESD voltage level.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 100% UIL tested
- <gt/>3KV typical HBM ESD protection level
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.3A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000363