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FDS6575.
Power MOSFET, P Channel, 20 V, 10 A, 0.013 ohm, SOIC, Surface Mount
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6575.Copy
Order Code2322610
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id10A
Drain Source On State Resistance0.013ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS6575 is a 2.5V specified P-channel MOSFET produced using rugged gate version of advanced PowerTrench® process. It has been optimized for load switch and battery protection applications with a wide range of gate drive voltage (2.5 to 8V).
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High current and power handling capability
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
10A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
2.5W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.013ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000135