Print Page
FDS4559
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 4.5 A, 4.5 A, 0.055 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS4559Copy
Order Code
Full Reel2251968
Re-Reel1471052RL
Cut Tape1471052
Your Part Number
28,131 In Stock
10,000 more incoming. You can reserve stock now
21,299 Delivery in 3-4 Business Days(SG stock)
6,830 Delivery in 5-6 Business Days(UK stock)
2 Delivery in 5-6 Business Days(US stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY7.810 | CNY39.05 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY7.810 (CNY8.8253) |
| 50+ | CNY6.460 (CNY7.2998) |
| 100+ | CNY5.100 (CNY5.763) |
| 500+ | CNY5.000 (CNY5.650) |
| 1000+ | CNY4.900 (CNY5.537) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 2500+ | CNY4.800 (CNY5.424) |
| 7500+ | CNY4.710 (CNY5.3223) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS4559Copy
Order Code
Full Reel2251968
Re-Reel1471052RL
Cut Tape1471052
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.055ohm
Drain Source On State Resistance P Channel0.055ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backlight inverter.
Applications
Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.055ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
0.055ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for FDS4559
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000209