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FDD86102
Power MOSFET, N Channel, 100 V, 36 A, 0.019 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDD86102
Order Code
Re-Reel2083234RL
Cut Tape2083234
Your Part Number
1,364 In Stock
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1364 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY18.820 | CNY18.82 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY18.820 (CNY21.2666) |
| 10+ | CNY12.120 (CNY13.6956) |
| 100+ | CNY8.310 (CNY9.3903) |
| 500+ | CNY6.650 (CNY7.5145) |
| 1000+ | CNY6.120 (CNY6.9156) |
| 5000+ | CNY6.040 (CNY6.8252) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD86102
Order Code
Re-Reel2083234RL
Cut Tape2083234
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id36A
Drain Source On State Resistance0.019ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.1V
Power Dissipation62W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FDD86102 is a N-channel MOSFET produced using advanced PowerTrench® process.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- Very low Qg and Qgd compared to competing Trench technologies
- Fast switching speed
- 100% UIL tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
36A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
62W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.019ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003