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FCMT099N65S3
Power MOSFET, N Channel, 650 V, 30 A, 0.099 ohm, PQFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFCMT099N65S3Copy
Manufacturer Standard Lead Time45 weeks
Order Code
Cut Tape2773489
Cut Tape2773489RL
Product RangeSuperFET III
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 45 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY60.830 (CNY68.7379) |
| 10+ | CNY41.210 (CNY46.5673) |
| 100+ | CNY30.100 (CNY34.013) |
| 500+ | CNY29.160 (CNY32.9508) |
| 1000+ | CNY28.580 (CNY32.2954) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY60.83 (CNY68.74 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFCMT099N65S3Copy
Manufacturer Standard Lead Time45 weeks
Order Code
Cut Tape2773489
Cut Tape2773489RL
Product RangeSuperFET III
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id30A
Drain Source On State Resistance0.099ohm
Transistor Case StylePQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation227W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeSuperFET III
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FCMT099N65S3 is a SUPERFET III MOSFET utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. Suitable for switching power applications such as server/telecom power, adapter and solar inverter applications
- 650V at Tj = 25°C
- Typical RDS(on) is 87mohm
- Ultra low gate charge (typical Qg = 56nC)
- Low effective output capacitance (typical Coss(eff) = 500pF)
- 100% avalanche tested
- Available in 8 pin PQFN package
Applications
Computer Hardware
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
PQFN
Rds(on) Test Voltage
10V
Power Dissipation
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.099ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.5V
No. of Pins
4Pins
Product Range
SuperFET III
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004637