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PSMN2R8-25MLC,115
Power MOSFET, N Channel, 25 V, 70 A, 2450 µohm, SC-100, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN2R8-25MLC,115Copy
Manufacturer Standard Lead Time27 weeks
Order Code2115261
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY14.150 (CNY15.9895) |
| 10+ | CNY9.990 (CNY11.2887) |
| 100+ | CNY6.610 (CNY7.4693) |
| 500+ | CNY5.190 (CNY5.8647) |
| 1000+ | CNY4.450 (CNY5.0285) |
| 5000+ | CNY3.570 (CNY4.0341) |
Price for:Each
Minimum: 1
Multiple: 1
CNY14.15 (CNY15.99 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN2R8-25MLC,115Copy
Manufacturer Standard Lead Time27 weeks
Order Code2115261
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id70A
Drain Source On State Resistance2450µohm
Transistor Case StyleSC-100
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.74V
Power Dissipation88W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN2R8-25MLC is a N-channel enhancement-mode logic level MOSFET optimised for 4.5V gate drive utilising NextPower Superjunction technology. It is designed and qualified for use in a wide range of load switching, synchronous buck regulator, DC-to-DC converter and domestic equipment applications.
- Low parasitic inductance and resistance
- Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
70A
Transistor Case Style
SC-100
Rds(on) Test Voltage
10V
Power Dissipation
88W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
2450µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.74V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004749