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PSMN1R5-30YL,115
Power MOSFET, N Channel, 30 V, 100 A, 1500 µohm, SOT-669, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R5-30YL,115Copy
Manufacturer Standard Lead Time26 weeks
Order Code
Re-Reel1845631RL
Cut Tape1845631
Your Part Number
63 In Stock
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63 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY16.990 | CNY16.99 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY16.990 (CNY19.1987) |
| 10+ | CNY10.750 (CNY12.1475) |
| 100+ | CNY7.280 (CNY8.2264) |
| 500+ | CNY5.910 (CNY6.6783) |
| 1000+ | CNY5.290 (CNY5.9777) |
| 5000+ | CNY4.760 (CNY5.3788) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R5-30YL,115Copy
Manufacturer Standard Lead Time26 weeks
Order Code
Re-Reel1845631RL
Cut Tape1845631
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100A
Drain Source On State Resistance1500µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation109W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN1R5-30YL is a N-channel logic level MOSFET with advanced TrenchMOS technology provides low RDS (ON) and low gate charge. It is designed and qualified for use in a wide range of It is designed and qualified for use in a wide range of DC-to-DC converters, lithium-ion battery protection, load switching, server power supplies and domestic equipment applications.
- Improved mechanical and thermal characteristics
- High efficiency gains in switching power converters
- LFPAK provides maximum power density in a power SO8 package
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Motor Drive & Control, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
109W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
1500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000027