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PSMN1R0-40YLDX
Power MOSFET, N Channel, 40 V, 100 A, 930 µohm, SOT-669, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R0-40YLDXCopy
Order Code
Re-Reel2449088RL
Cut Tape2449088
Your Part Number
10,197 In Stock
6,000 more incoming. You can reserve stock now
10,197 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY28.480 | CNY28.48 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY28.480 (CNY32.1824) |
| 10+ | CNY18.410 (CNY20.8033) |
| 100+ | CNY12.760 (CNY14.4188) |
| 500+ | CNY11.870 (CNY13.4131) |
| 1000+ | CNY8.730 (CNY9.8649) |
| 5000+ | CNY7.930 (CNY8.9609) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R0-40YLDXCopy
Order Code
Re-Reel2449088RL
Cut Tape2449088
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance930µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation198W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN1R0-40YLD is a N-channel enhancement-mode logic level gate drive MOSFET designed using advanced TrenchMOS® Superjunction technology. It is designed and qualified for high performance power switching applications.
- NextPower-S3 technology delivers superfast switching with soft recovery
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-plus body-diode, gives soft switching without the associated high IDSS leakage
- Optimised for 4.5V gate drive utilising NextPower-S3 Superjunction technology
- High reliability LFPAK package, copper-clip, solder die attach and qualified to 150°C
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
- Low parasitic inductance and resistance
- -55 to 150°C Junction temperature range
Applications
Power Management, Motor Drive & Control, Industrial, Medical
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
198W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
930µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000146