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PSMN1R0-30YLC,115
Power MOSFET, N Channel, 30 V, 100 A, 1150 µohm, SOT-669, Surface Mount
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ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R0-30YLC,115Copy
Manufacturer Standard Lead Time27 weeks
Order Code
Re-Reel1895397RL
Cut Tape1895397
Your Part Number
693 In Stock
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693 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY25.220 | CNY25.22 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY25.220 (CNY28.4986) |
| 10+ | CNY16.030 (CNY18.1139) |
| 50+ | CNY13.410 (CNY15.1533) |
| 200+ | CNY10.790 (CNY12.1927) |
| 500+ | CNY8.740 (CNY9.8762) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R0-30YLC,115Copy
Manufacturer Standard Lead Time27 weeks
Order Code
Re-Reel1895397RL
Cut Tape1895397
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100A
Drain Source On State Resistance1150µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.41V
Power Dissipation137W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN1R0-30YLC is a N-channel enhancement-mode logic level MOSFET optimised for 4.5V gate drive utilising NextPower Superjunction technology. It is designed and qualified for use in a wide range of DC-to-DC converters, lithium-ion battery protection, load switching, power O-ring, server power supplies, sync rectifier and domestic equipment applications.
- Ultra-low QG, QGD and QOSS for high system efficiencies at low and high loads
- Ultra-low RDS (ON) and low parasitic inductance
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
137W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
1150µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.41V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0008