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PSMN040-100MSEX
Power MOSFET, N Channel, 100 V, 30 A, 0.0294 ohm, SOT-1210, Surface Mount
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ManufacturerNEXPERIA
Manufacturer Part NoPSMN040-100MSEXCopy
Manufacturer Standard Lead Time27 weeks
Order Code2319892
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY14.750 (CNY16.6675) |
| 10+ | CNY10.990 (CNY12.4187) |
| 100+ | CNY7.310 (CNY8.2603) |
| 500+ | CNY5.630 (CNY6.3619) |
| 1000+ | CNY4.350 (CNY4.9155) |
| 5000+ | CNY4.270 (CNY4.8251) |
Price for:Each
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Multiple: 1
CNY14.75 (CNY16.67 inc GST)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN040-100MSEXCopy
Manufacturer Standard Lead Time27 weeks
Order Code2319892
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0294ohm
Transistor Case StyleSOT-1210
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.3V
Power Dissipation91W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
PSMN040-100MSEX is a N-channel 100V 36.6mohm standard level MOSFET in LFPAK33 designed specifically for high-power PoE applications. It is a new standard and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management, and power density requirements. The applications include high-power PoE applications (60W and higher), IEEE 802.3at, and proprietary solutions.
- Enhanced forward biased safe operating area for superior linear mode operation
- Low Rdson for low conduction losses
- Ultra reliable LFPAK33 package for superior thermal and ruggedness performance
- Drain-source voltage is 100V max (Tj ≥ 25 °C; Tj ≤ 175 °C)
- Drain current is 30A max (VGS = 10V; Tj ID drain current = 25°C)
- Total power dissipation is 91W max (Tmb = 25°C)
- Drain-source on-state resistance is 66mohm max (VGS = 10V; ID = 10A; Tj = 100°C
- Gate-drain charge is 10.7nC typ (ID = 10A; VDS = 50V; VGS = 10V; Tj = 25°C)
- Total gate charge is 30nC typ (ID = 10A; VDS = 50V; VGS = 10V; Tj = 25°C)
- 4 leads SOT1210 package, junction temperature range from -55 to 175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
SOT-1210
Rds(on) Test Voltage
10V
Power Dissipation
91W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0294ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.3V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000071