Print Page
PSMN026-80YS,115
Power MOSFET, N Channel, 80 V, 34 A, 0.0275 ohm, SOT-669, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN026-80YS,115Copy
Manufacturer Standard Lead Time23 weeks
Order Code
Re-Reel1785645RL
Cut Tape1785645
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY6.630 | CNY6.63 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY6.630 (CNY7.4919) |
| 10+ | CNY4.230 (CNY4.7799) |
| 100+ | CNY3.110 (CNY3.5143) |
| 500+ | CNY3.040 (CNY3.4352) |
| 1000+ | CNY2.960 (CNY3.3448) |
| 5000+ | CNY2.760 (CNY3.1188) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN026-80YS,115Copy
Manufacturer Standard Lead Time23 weeks
Order Code
Re-Reel1785645RL
Cut Tape1785645
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id34A
Drain Source On State Resistance0.0275ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation74W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN026-80YS is a N-channel standard level MOSFET with advanced TrenchMOS technology provides low RDS (ON) and low gate charge. It is designed and qualified for use in a wide range of DC-to-DC convertor, lithium-ion battery protection, load switching, server power supplies and domestic equipment applications.
- Improved mechanical and thermal characteristics
- High efficiency gains in switching power converters
- LFPAK provides maximum power density in a power SO8 package
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
34A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
74W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0275ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000155