Print Page
PSMN017-60YS,115
Power MOSFET, N Channel, 60 V, 44 A, 0.0157 ohm, SOT-669, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN017-60YS,115Copy
Manufacturer Standard Lead Time27 weeks
Order Code1845633
Your Part Number
485 In Stock
Need more?
485 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY12.760 (CNY14.4188) |
| 10+ | CNY8.040 (CNY9.0852) |
| 100+ | CNY5.300 (CNY5.989) |
| 500+ | CNY4.120 (CNY4.6556) |
| 1000+ | CNY3.810 (CNY4.3053) |
| 5000+ | CNY3.500 (CNY3.955) |
Price for:Each
Minimum: 1
Multiple: 1
CNY12.76 (CNY14.42 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN017-60YS,115Copy
Manufacturer Standard Lead Time27 weeks
Order Code1845633
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id44A
Drain Source On State Resistance0.0157ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation74W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN017-60YS is a N-channel standard level MOSFET with advanced TrenchMOS technology provides low RDS (ON) and low gate charge. It is designed and qualified for use in a wide range of DC-to-DC convertor, lithium-ion battery protection, load switching, server power supplies and domestic equipment applications.
- Improved mechanical and thermal characteristics
- High efficiency gains in switching power converters
- LFPAK provides maximum power density in a power SO8 package
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Motor Drive & Control, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
44A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
74W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0157ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for PSMN017-60YS,115
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000147