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PMV55ENEAR
Power MOSFET, N Channel, 60 V, 3.1 A, 0.06 ohm, TO-236AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPMV55ENEAR
Order Code
Re-Reel2628094RL
Cut Tape2628094
Your Part Number
3 In Stock
24,000 more incoming. You can reserve stock now
3 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY7.340 | CNY36.70 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY7.340 (CNY8.2942) |
| 50+ | CNY4.310 (CNY4.8703) |
| 100+ | CNY3.100 (CNY3.503) |
| 500+ | CNY2.500 (CNY2.825) |
| 1500+ | CNY1.850 (CNY2.0905) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV55ENEAR
Order Code
Re-Reel2628094RL
Cut Tape2628094
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id3.1A
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation478mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
PMV55ENEAR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.
- Logic level compatible, very fast switching
- ElectroStatic Discharge (ESD) protection > 2kV HBM
- AEC-Q101 qualified
- Drain-source voltage is 60V max at Tj = 25°C
- Gate-source voltage is 20V maximum
- Drain current is 3.1A maximum at VGS = 10V; Tamb = 25°C
- Peak drain current is 12.6A max at Tamb = 25°C; single pulse; tp ≤ 10µs
- Total power dissipation is 478mW max at Tamb = 25°C
- Source current is 1.3A max at Tamb = 25°C
- Ambient temperature range from -55 to 150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.1A
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
10V
Power Dissipation
478mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000009