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PMV45EN2R
Power MOSFET, N Channel, 30 V, 5.1 A, 0.042 ohm, SOT-23, Surface Mount
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ManufacturerNEXPERIA
Manufacturer Part NoPMV45EN2R
Order Code
Re-Reel2469655RL
Cut Tape2469655
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 58 week(s)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY3.720 | CNY18.60 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY3.720 (CNY4.2036) |
| 50+ | CNY2.790 (CNY3.1527) |
| 100+ | CNY1.670 (CNY1.8871) |
| 500+ | CNY1.370 (CNY1.5481) |
| 1500+ | CNY1.060 (CNY1.1978) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV45EN2R
Order Code
Re-Reel2469655RL
Cut Tape2469655
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.1A
Drain Source On State Resistance0.042ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation510mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
PMV45EN2R is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, switching circuits.
- Logic level compatible, very fast switching
- Drain-source breakdown voltage is 30V min at ID = 250µA; VGS = 0V; Tj = 25°C
- Gate-source threshold voltage is 1.5V typ at ID = 250µA; VDS=VGS; Tj = 25°C
- Drain leakage current is 1µA max at VDS = 30V; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 35mohm typ at VGS = 10V; ID = 4.1A; Tj = 25°C
- Source-drain voltage is 0.8V typ at IS = 1A; VGS = 0V; Tj = 25°C
- Rise time is 12ns typ at VDS = 15 V; ID = 3.2A; VGS = 10V;RG(ext) = 6ohm; Tj = 25°C
- Fall time is 2ns typ at VDS = 15 V; ID = 3.2A; VGS = 10V;RG(ext) = 6ohm; Tj = 25°C
- Ambient temperature range from -55°C to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.1A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
510mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for PMV45EN2R
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000223