Print Page
PMDPB30XN,115
Dual MOSFET, N Channel, 20 V, 20 V, 5.3 A, 5.3 A, 0.04 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 58 week(s)
Notify me when back in stock
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.540 (CNY7.3902) |
| 10+ | CNY4.660 (CNY5.2658) |
| 100+ | CNY3.070 (CNY3.4691) |
| 500+ | CNY2.290 (CNY2.5877) |
| 1000+ | CNY1.950 (CNY2.2035) |
| 5000+ | CNY1.460 (CNY1.6498) |
Price for:Each
Minimum: 5
Multiple: 5
CNY32.70 (CNY36.95 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMDPB30XN,115
Order Code2311189
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel5.3A
Drain Source On State Resistance N Channel0.04ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-1118
No. of Pins8Pins
Power Dissipation N Channel1.17W
Power Dissipation P Channel1.17W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The PMDPB30XN is a dual N-channel enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.
- Very fast switching characteristics
- Exposed drain pad for excellent thermal conduction
Applications
Industrial, Power Management, Motor Drive & Control, Portable Devices
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
5.3A
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
1.17W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.04ohm
Transistor Case Style
SOT-1118
Power Dissipation N Channel
1.17W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000007