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PMCPB5530X,115
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 5.3 A, 5.3 A, 0.026 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 58 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY7.340 (CNY8.2942) |
| 10+ | CNY4.550 (CNY5.1415) |
| 100+ | CNY2.950 (CNY3.3335) |
| 500+ | CNY2.330 (CNY2.6329) |
| 1000+ | CNY2.030 (CNY2.2939) |
| 5000+ | CNY1.990 (CNY2.2487) |
Price for:Each
Minimum: 5
Multiple: 5
CNY36.70 (CNY41.47 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMCPB5530X,115
Order Code2311188
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel5.3A
Drain Source On State Resistance N Channel0.026ohm
Drain Source On State Resistance P Channel0.026ohm
Transistor Case StyleSOT-1118
No. of Pins8Pins
Power Dissipation N Channel1.17W
Power Dissipation P Channel1.17W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The PMCPB5530X is a N/P-channel complementary enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.
- Very fast switching characteristics
- Exposed drain pad for excellent thermal conduction
Applications
Industrial, Power Management, Motor Drive & Control, Portable Devices
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
5.3A
Drain Source On State Resistance P Channel
0.026ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.17W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.026ohm
Transistor Case Style
SOT-1118
Power Dissipation N Channel
1.17W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000007