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PH2925U,115
Power MOSFET, N Channel, 25 V, 100 A, 2300 µohm, SOT-669, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPH2925U,115Copy
Manufacturer Standard Lead Time21 weeks
Order Code
Re-Reel1081442RL
Cut Tape1081442
Your Part Number
1,600 In Stock
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1,600 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY14.860 | CNY14.86 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY14.860 (CNY16.7918) |
| 10+ | CNY9.460 (CNY10.6898) |
| 100+ | CNY6.360 (CNY7.1868) |
| 500+ | CNY5.030 (CNY5.6839) |
| 1000+ | CNY4.380 (CNY4.9494) |
| 5000+ | CNY4.060 (CNY4.5878) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPH2925U,115Copy
Manufacturer Standard Lead Time21 weeks
Order Code
Re-Reel1081442RL
Cut Tape1081442
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
Drain Source On State Resistance2300µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation62.5W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PH2925U is a N-channel enhancement-mode ultra-low level FET in a plastic package using TrenchMOS® technology. It is designed and qualified for use in DC-to-DC convertors and switched-mode power supply applications.
- Higher operating power due to low thermal resistance
- Low conduction losses due to low ON-state resistance
- Interfaces directly with low voltage gate drivers
- -55 to 150°C Junction temperature range
Applications
Power Management, Computers & Computer Peripherals, Portable Devices, Consumer Electronics, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
4.5V
Power Dissipation
62.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
2300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000214