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BUK7K6R2-40EX
Dual MOSFET, N Channel, 40 V, 40 V, 40 A, 40 A, 0.0058 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoBUK7K6R2-40EXCopy
Order Code
Re-Reel3439669RL
Cut Tape3439669
Your Part Number
76 In Stock
3,000 more incoming. You can reserve stock now
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY17.810 | CNY17.81 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY17.810 (CNY20.1253) |
| 10+ | CNY11.390 (CNY12.8707) |
| 100+ | CNY7.630 (CNY8.6219) |
| 500+ | CNY7.140 (CNY8.0682) |
| 1000+ | CNY6.650 (CNY7.5145) |
| 5000+ | CNY6.150 (CNY6.9495) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK7K6R2-40EXCopy
Order Code
Re-Reel3439669RL
Cut Tape3439669
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel40A
Continuous Drain Current Id P Channel40A
Drain Source On State Resistance N Channel0.0058ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleLFPAK56D
No. of Pins8Pins
Power Dissipation N Channel68W
Power Dissipation P Channel68W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (25-Jun-2025)
Product Overview
BUK7K6R2-40EX is a dual standard level N-channel MOSFET in a LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to the AEC Q101 standard for use in high-performance automotive applications. Typical applications include 12V automotive systems, motors, lamps and solenoid control, transmission control, ultra-high performance power switching.
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175°C rating
- True standard level gate with VGS(th) of greater than 1V at 175°C
- Drain-source breakdown voltage is 36V min at ID = 250µA; VGS = 0V; Tj V(BR)DSS drain-source = -55°C
- Drain leakage current is 0.02µA typ at VDS = 40V; VGS = 0V; Tj = 25°C
- Gate-source threshold voltage is 3V typ at ID = 1mA; VDS = VGS; Tj = 25°C
- Drain-source on-state resistance is 4.8mohm typ at VGS = 10V; ID = 20A; Tj = 25°C
- Total gate charge is 32.3nC typ at ID = 20A; VDS = 32V; VGS = 10V; Tj = 25°C
- Source-drain voltage is 0.78V typ at IS = 15A; VGS = 0V; Tj = 25°C
- Reverse recovery time is 25ns typ at IS = 5A; dIS/dt = -100A/µs; VGS = 0V; VDS = 20V; Tj = 25°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
40A
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
68W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
40A
Drain Source On State Resistance N Channel
0.0058ohm
Transistor Case Style
LFPAK56D
Power Dissipation N Channel
68W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Alternatives for BUK7K6R2-40EX
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001361