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BSS138PS,115
Dual MOSFET, N Channel, 60 V, 320 mA, 0.9 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoBSS138PS,115
Order Code
Re-Reel1972664RL
Cut Tape1972664
Your Part Number
309,963 In Stock
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90846 Delivery in 3-4 Business Days(SG stock)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY3.080 | CNY15.40 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY3.080 (CNY3.4804) |
| 50+ | CNY1.880 (CNY2.1244) |
| 100+ | CNY1.170 (CNY1.3221) |
| 500+ | CNY0.910 (CNY1.0283) |
| 1500+ | CNY0.802 (CNY0.9063) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS138PS,115
Order Code
Re-Reel1972664RL
Cut Tape1972664
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel320mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.9ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel420mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Logic-level compatible
- Very fast switching
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
320mA
Drain Source On State Resistance N Channel
0.9ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
420mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004082