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BSS138BKS,115
Dual MOSFET, Trench, N Channel, 60 V, 60 V, 320 mA, 320 mA, 1.6 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoBSS138BKS,115
Order Code
Re-Reel2575105RL
Cut Tape2575105
Your Part Number
142,412 In Stock
42,000 more incoming. You can reserve stock now
142412 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY4.070 | CNY20.35 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.070 (CNY4.5991) |
| 50+ | CNY2.500 (CNY2.825) |
| 100+ | CNY1.570 (CNY1.7741) |
| 500+ | CNY1.160 (CNY1.3108) |
| 1500+ | CNY1.020 (CNY1.1526) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS138BKS,115
Order Code
Re-Reel2575105RL
Cut Tape2575105
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel320mA
Continuous Drain Current Id P Channel320mA
Drain Source On State Resistance N Channel1.6ohm
Drain Source On State Resistance P Channel1.6ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel280mW
Power Dissipation P Channel280mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
BSS138BKS,115 is a 60V, 320mA dual N-channel enhancement-mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It is suitable for relay drivers, high-speed line drivers, low-side load-switch and switching circuit applications.
- Logic-level compatible
- Very fast switching
- ESD protection up to 1.5kV
- AEC-Q101 qualified
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
320mA
Drain Source On State Resistance P Channel
1.6ohm
No. of Pins
6Pins
Power Dissipation P Channel
280mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
320mA
Drain Source On State Resistance N Channel
1.6ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
280mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for BSS138BKS,115
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00002