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BSH205G2AR
Power MOSFET, P Channel, 20 V, 2.6 A, 0.118 ohm, TO-236AB, Surface Mount
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY6.050 | CNY30.25 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.050 (CNY6.8365) |
| 50+ | CNY3.840 (CNY4.3392) |
| 100+ | CNY2.610 (CNY2.9493) |
| 500+ | CNY1.770 (CNY2.0001) |
| 1500+ | CNY1.540 (CNY1.7402) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSH205G2ARCopy
Manufacturer Standard Lead Time69 weeks
Order Code
Re-Reel3585589RL
Cut Tape3585589
Product RangeTrench
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.118ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max650mV
Power Dissipation610mW
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeTrench
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
BSH205G2AR is a P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, high-side load switch, and switching circuits.
- Low threshold voltage
- Very fast switching
- AEC-Q101 qualified
- Drain-source voltage is -20V max at Tj = 25°C
- Gate-source voltage is 8V maximum
- Drain current is -2.6A max at VGS = -4.5V; Tamb = 25°C
- Peak drain current is -10A max at Tamb = 25°C; single pulse; tp ≤ 10µs
- Source current is -1.2A max at Tamb = 25°C
- Total power dissipation is 610mW max at Tamb = 25°C
- Ambient temperature range from -55 to 175°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.6A
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
4.5V
Power Dissipation
610mW
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.118ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
650mV
No. of Pins
3Pins
Product Range
Trench
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for BSH205G2AR
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000048