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HMV4P1P02S
Power MOSFET, P Channel, 20 V, 4.1 A, 0.039 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMULTICOMP PRO
Manufacturer Part NoHMV4P1P02SCopy
Order Code4295182
Product RangeMulticomp Pro P Channel MOSFETs
Your Part Number
15,000 In Stock
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15,000 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.260 (CNY7.0738) |
| 10+ | CNY4.100 (CNY4.633) |
| 100+ | CNY2.630 (CNY2.9719) |
| 500+ | CNY1.960 (CNY2.2148) |
| 1000+ | CNY1.680 (CNY1.8984) |
| 5000+ | CNY1.330 (CNY1.5029) |
Price for:Each
Minimum: 5
Multiple: 5
CNY31.30 (CNY35.37 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMULTICOMP PRO
Manufacturer Part NoHMV4P1P02SCopy
Order Code4295182
Product RangeMulticomp Pro P Channel MOSFETs
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.1A
Drain Source On State Resistance0.039ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.1W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeMulticomp Pro P Channel MOSFETs
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The HMV4P1P02S is a high-performance P-channel MOSFET designed for low-voltage, low-current applications. It features ultra-low on-resistance and fast switching capabilities, making it ideal for efficient power management and precise control tasks. This MOSFET is well-suited for applications such as small servo motor control, power MOSFET gate drivers, and various switching circuits where compact size and high reliability are essential.
- Advanced Trench Technology
- Lead Free Product is Acquired
- ESD Rating : HBM 2.0KV
- Excellent RDS(ON) and Low Gate Charge
Applications
Power Supplies, Motor Speed Controls, Portable Devices
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.1A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.039ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Product Range
Multicomp Pro P Channel MOSFETs
MSL
-
Technical Docs (1)
Alternatives for HMV4P1P02S
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000014