CSD669

The CSD669 is a high-voltage NPN silicon transistor designed for medium-current applications, offering reliable performance in a compact TO-126-3 package. With a maximum collector-emitter voltage of 160V and a current rating of 1.5A, it is suitable for use in switching and amplification circuits where high voltage tolerance and moderate current handling are required. The CSD669 transistor is a robust and versatile NPN component, ideal for high-voltage and medium-current applications. Its reliable performance, compact TO-126-3 package, and broad operating temperature range make it a valuable choice for various electronic circuits and systems.

• Collector-Emitter Voltage (Vceo): 160V
• Collector-Base Voltage (Vcbo): 160V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 1.5A
• Base Current (Ib): Dependent on specific application and circuit design
• Power Dissipation (Pd): Typically up to 2W, depending on cooling and mounting conditions
• DC Current Gain (hFE): Typically between 50 and 150 at Ic = 1A, Vce = 10V (varies with specific part and operating conditions)
• Package Type: TO-126-3
• Pin Configuration: 3 Pins (Collector, Base, Emitter)
• Mounting Style: Through-Hole
• Package Dimensions: Compact and efficient for space-constrained applications
• Junction Temperature (Tj): -55°C to +150°C
• Thermal Resistance, Junction to Ambient (RθJA): Approximately 100°C/W (varies with heat sinking and mounting conditions)

Applications

Audio, Power Supplies, DC/DC Converters, Motor Drive & Control, Signal Processing