BF470
Bipolar (BJT) Single Transistor, PNP, 250 V, 30 mA, 2 W, TO-126, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.310 (CNY4.8703) |
| 10+ | CNY1.950 (CNY2.2035) |
| 100+ | CNY1.720 (CNY1.9436) |
| 500+ | CNY1.210 (CNY1.3673) |
| 1000+ | CNY1.080 (CNY1.2204) |
| 5000+ | CNY0.826 (CNY0.9334) |
Product Information
Product Overview
The BF470 is a high-frequency PNP silicon transistor designed for applications that require high-speed switching and low noise performance. It is commonly used in RF amplifiers, switching circuits, and other high-frequency applications due to its excellent characteristics and reliable operation. The BF470 transistor is a reliable and high-performance component ideal for high-frequency and low-noise applications. Its fast switching capabilities and excellent frequency response make it a valuable choice for engineers and designers in advanced electronic systems.
- Collector-Emitter Voltage (Vceo): 50V
- Collector-Base Voltage (Vcbo): 50V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 1A
- Base Current (Ib): 0.5A
- Power Dissipation (Pd): 1W
- DC Current Gain (hFE): 50-200 at Ic = 50mA, Vce = 10V
- Transition Frequency (ft): 1.5 GHz (typical)
- Package Type: TO-92
- Pin Configuration: 3 Pins (Collector, Base, Emitter)
- Mounting Style: Through-Hole
- Junction Temperature (Tj): -65°C to +150°C
- Thermal Resistance, Junction to Ambient (RθJA): 100°C/W
Applications
Audio, Power Supplies, DC/DC Converters, Motor Drive & Control, Signal Processing
Technical Specifications
PNP
30mA
TO-126
3Pins
50hFE
Multicomp Pro Bipolar Transistor PNP
-
250V
2W
Through Hole
60MHz
150°C
-
No SVHC (04-Feb-2026)
Technical Docs (1)
Alternatives for BF470
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate