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ManufacturerMULTICOMP PRO
Manufacturer Part No2N7002
Order Code4295174
Product RangeMulticomp Pro N Channel MOSFETs
Your Part Number
22,725 In Stock
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10 Next business day delivery available(Shanghai stock)
585 Delivery in 3-4 Business Days(SG stock)
22130 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.090 (CNY2.3617) |
| 10+ | CNY1.350 (CNY1.5255) |
| 100+ | CNY0.899 (CNY1.0159) |
| 500+ | CNY0.693 (CNY0.7831) |
| 1000+ | CNY0.577 (CNY0.652) |
| 5000+ | CNY0.493 (CNY0.5571) |
Price for:Each
Minimum: 5
Multiple: 5
CNY10.45 (CNY11.81 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMULTICOMP PRO
Manufacturer Part No2N7002
Order Code4295174
Product RangeMulticomp Pro N Channel MOSFETs
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id115mA
Drain Source On State Resistance5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation225mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMulticomp Pro N Channel MOSFETs
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
These N-channel enhancement mode field-effect transistors are manufactured with high cell density DMOS technology. They are designed to minimize on-state resistance while delivering rugged, reliable, and fast switching performance. These transistors are especially well-suited for low-voltage, low-current applications, including small servo motor control, power MOSFET gate drivers, and other switching applications.
- High Density Cell Design for Low RDS(on)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- ESD Protection Level: HBM <gt/> 100 V, CDM <gt/> 2 kV
- This Device is Pb−Free and Halogen Free
Applications
Portable Devices, Power Supplies, DC/DC Converters, Wireless Charging
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
115mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
225mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
Multicomp Pro N Channel MOSFETs
MSL
-
Technical Docs (1)
Alternatives for 2N7002
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000009
