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IXYX110N120A4
IGBT, 375 A, 1.45 V, 1.36 kW, 1.2 kV, PLUS247, 3 Pins
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ManufacturerLITTELFUSE
Manufacturer Part NoIXYX110N120A4Copy
Manufacturer Standard Lead Time80 weeks
Order Code3996595
Product RangeXPT GenX4 Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 80 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY225.220 (CNY254.4986) |
| 5+ | CNY199.670 (CNY225.6271) |
| 10+ | CNY174.120 (CNY196.7556) |
| 50+ | CNY169.740 (CNY191.8062) |
| 100+ | CNY165.360 (CNY186.8568) |
Price for:Each
Minimum: 1
Multiple: 1
CNY225.22 (CNY254.50 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXYX110N120A4Copy
Manufacturer Standard Lead Time80 weeks
Order Code3996595
Product RangeXPT GenX4 Series
Technical Datasheet
Continuous Collector Current375A
Collector Emitter Saturation Voltage1.45V
Power Dissipation1.36kW
Collector Emitter Voltage Max1.2kV
Transistor Case StylePLUS247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product RangeXPT GenX4 Series
Product Overview
IXYX110N120A4 is an XPT™ ultra-low-Vsat PT IGBT for up to 5kHz switching. Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, this device helps to reduce gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities, and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Typical applications include battery chargers, lamp ballasts, power inverters, uninterruptible power supplies (UPS), and welding machines.
- Ideal for high power density and high inrush currents, low loss applications
- Hard-switching capable, easy paralleling of devices
- Reduced gate driver requirements
- Low on-state voltages Vcesat, positive thermal coefficient of Vcesat
- TO-247 PLUS package type
- 1200V VCES at TJ = 25°C to 175°C
- 375A Ic25 at TC= 25°C (chip capability)
- 1.13/10Nm/lb.in mounting torque
- Junction temperature range from -55°C to 175°C
Technical Specifications
Continuous Collector Current
375A
Power Dissipation
1.36kW
Transistor Case Style
PLUS247
Operating Temperature Max
175°C
Product Range
XPT GenX4 Series
Collector Emitter Saturation Voltage
1.45V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.008539