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IXTA1N200P3HV.
MOSFET, N-CH, 2KV, 1A, TO-263HV
Image is for illustrative purposes only. Please refer to product description.
8,105 In Stock
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20 Next business day delivery available(Shanghai stock)
8085 Delivery in 5-6 Business Days(US stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY79.790 (CNY90.1627) |
| 5+ | CNY67.120 (CNY75.8456) |
| 10+ | CNY54.450 (CNY61.5285) |
| 50+ | CNY49.350 (CNY55.7655) |
| 100+ | CNY44.250 (CNY50.0025) |
| 250+ | CNY43.370 (CNY49.0081) |
Price for:Each
Minimum: 1
Multiple: 1
CNY79.79 (CNY90.16 inc GST)
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTA1N200P3HV.
Order Code3771253
Technical Datasheet
Channel TypeN Channel
Drain Source On State Resistance40ohm
Transistor Case StyleTO-263HV
Gate Source Threshold Voltage Max4V
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Transistor Case Style
TO-263HV
Operating Temperature Max
150°C
Qualification
-
Drain Source On State Resistance
40ohm
Gate Source Threshold Voltage Max
4V
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00205