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SPW15N60C3FKSA1
Power MOSFET, N Channel, 600 V, 15 A, 0.28 ohm, TO-247, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoSPW15N60C3FKSA1Copy
Manufacturer Standard Lead Time27 weeks
Order Code2480717
Also Known AsSPW15N60C3, SP000014530
Your Part Number
1,038 In Stock
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1,038 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY46.670 (CNY52.7371) |
| 10+ | CNY26.390 (CNY29.8207) |
| 100+ | CNY21.920 (CNY24.7696) |
| 500+ | CNY21.490 (CNY24.2837) |
| 1000+ | CNY21.050 (CNY23.7865) |
Price for:Each
Minimum: 1
Multiple: 1
CNY46.67 (CNY52.74 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPW15N60C3FKSA1Copy
Manufacturer Standard Lead Time27 weeks
Order Code2480717
Also Known AsSPW15N60C3, SP000014530
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id15A
Drain Source On State Resistance0.28ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation156W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (17-Jan-2023)
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Product Overview
The SPW15N60C3 is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for server, telecom, PC power and adapter applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- Qualified according to JEDEC for target applications
- Improved transconductance
- Periodic avalanche rated
- Low specific ON-state resistance
- Very low energy storage in output capacitance (Eoss)@400V
- Field proven CoolMOS™ quality
- High efficiency and power density
- Outstanding performance
- High reliability
- Ease of use
Applications
Industrial, Communications & Networking, Consumer Electronics, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
15A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.28ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00443