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SPD04N80C3ATMA1
Power MOSFET, N Channel, 800 V, 4 A, 1.3 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoSPD04N80C3ATMA1Copy
Manufacturer Standard Lead Time17 weeks
Order Code
Re-Reel1664108RL
Cut Tape1664108
Also Known AsSPD04N80C3, SP001117768
Your Part Number
5,352 In Stock
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5,352 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY9.500 | CNY47.50 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY9.500 (CNY10.735) |
| 50+ | CNY7.320 (CNY8.2716) |
| 100+ | CNY5.130 (CNY5.7969) |
| 500+ | CNY4.510 (CNY5.0963) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPD04N80C3ATMA1Copy
Manufacturer Standard Lead Time17 weeks
Order Code
Re-Reel1664108RL
Cut Tape1664108
Also Known AsSPD04N80C3, SP001117768
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4A
Drain Source On State Resistance1.3ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation63W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
SPD04N80C3ATMA1 is a CoolMOS™ power transistor. It is designed for industrial applications with high DC bulk voltage, and switching applications ( i.e. active clamp forward ). Potential applications are consumer, PC power, adapter, lighting, and solar.
- New revolutionary high voltage technology
- Extreme dv/dt rated, high peak current capability
- Fully qualified according to JEDEC for industrial applications
- Ultra low gate charge, ultra low effective capacitances
- High efficiency and power density, outstanding cost/performance
- High reliability, ease-of-use
- Drain-source breakdown voltage is 800V at VGS=0V, I D=250µA
- Drain-source on-state resistance is 1.3ohm at VGS=10V, I D=2.5A, Tj=25°C
- Gate charge total is 23nC typ at VDD=640V, ID=4A, VGS=0 to 10V
- PG-TO252-3 package, operating and storage temperature range from -55 to 150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
63W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003