ISC035N10NM5LF2ATMA1
Power MOSFET, N Channel, 100 V, 164 A, 3500 µohm, TDSON-FL, Surface Mount
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY49.860 | CNY49.86 |
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY49.860 (CNY56.3418) |
| 10+ | CNY32.150 (CNY36.3295) |
| 100+ | CNY24.370 (CNY27.5381) |
| 500+ | CNY21.690 (CNY24.5097) |
| 1000+ | CNY20.570 (CNY23.2441) |
Product Information
Product Overview
ISC035N10NM5LF2ATMA1 is a OptiMOS™ 5 single N-channel linear FET 100V, 3.55mohm, 164A in a 8 pin TDSON-FL package. It offers the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C and 125˚C. The OptiMOS™ Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. ISC035N10NM5LF2 is targeted for high in-rush current, harsh applications, such as hot-swap, e-fuse, and protection applications commonly found in telecom, data server and battery management systems (BMS).
- 100% avalanche tested
- Gate source voltage is ±20V
- Power dissipation is 217W
- Operating temperature range from -55 to 175°C
Technical Specifications
N Channel
164A
TDSON-FL
10V
217W
175°C
-
100V
3500µohm
Surface Mount
3.9V
8Pins
OptiMOS 5 Series
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate