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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY14.550 (CNY16.4415) |
| 10+ | CNY14.260 (CNY16.1138) |
| 25+ | CNY13.970 (CNY15.7861) |
| 50+ | CNY13.680 (CNY15.4584) |
| 100+ | CNY13.390 (CNY15.1307) |
| 250+ | CNY13.100 (CNY14.803) |
| 500+ | CNY12.810 (CNY14.4753) |
| 1000+ | CNY12.520 (CNY14.1476) |
Product Information
Product Overview
The IRS2004PBF is a high voltage high speed power MOSFET and IGBT Half-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 to 200V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout
- 3.3, 5 and 15V Logic compatible
- Cross-conduction prevention logic
- Internally set dead-time
- High-side output in phase with input
- Shutdown input turns OFF both channels
- Matched propagation delay for both channels
Applications
Power Management
Technical Specifications
2Channels
Half Bridge
8Pins
Through Hole
290mA
10V
-40°C
680ns
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-
-
IGBT, MOSFET
DIP
Non-Inverting
600mA
20V
125°C
150ns
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Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
