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IRLS3036TRLPBF
Power MOSFET, N Channel, 60 V, 270 A, 2400 µohm, TO-263 (D2PAK), Surface Mount
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY33.130 | CNY33.13 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY33.130 (CNY37.4369) |
| 10+ | CNY21.870 (CNY24.7131) |
| 50+ | CNY18.640 (CNY21.0632) |
| 100+ | CNY15.400 (CNY17.402) |
| 250+ | CNY15.100 (CNY17.063) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLS3036TRLPBF
Order Code
Re-Reel2577183RL
Cut Tape2577183
Product RangeHEXFET
Also Known AsSP001568674
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id270A
Drain Source On State Resistance2400µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation380W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRLS3036TRLPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is optimized for logic level drive. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Very low RDS (ON) at 4.5V VGS
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
- Logic level
Applications
Power Management, Industrial, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
270A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
380W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002081