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IRLR2705TRPBF
Power MOSFET, N Channel, 55 V, 28 A, 0.04 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRLR2705TRPBFCopy
Manufacturer Standard Lead Time38 weeks
Order Code
Re-Reel2468054RL
Cut Tape2468054
Also Known AsSP001578864
Your Part Number
2,684 In Stock
8,000 more incoming. You can reserve stock now
2,684 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY4.980 | CNY24.90 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.980 (CNY5.6274) |
| 50+ | CNY4.110 (CNY4.6443) |
| 100+ | CNY3.240 (CNY3.6612) |
| 500+ | CNY2.480 (CNY2.8024) |
| 1000+ | CNY2.240 (CNY2.5312) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLR2705TRPBFCopy
Manufacturer Standard Lead Time38 weeks
Order Code
Re-Reel2468054RL
Cut Tape2468054
Also Known AsSP001578864
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id28A
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation68W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRLR2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount application.
- Logic level gate drive
- Advanced process technology
- Fully avalanche rating
- Dynamic dV/dt rating
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
28A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
68W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002