IRLR120NTRPBF
Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-252AA, Surface Mount
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY12.190 | CNY12.19 |
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY12.190 (CNY13.7747) |
| 10+ | CNY7.550 (CNY8.5315) |
| 100+ | CNY5.100 (CNY5.763) |
| 500+ | CNY3.980 (CNY4.4974) |
| 1000+ | CNY2.950 (CNY3.3335) |
| 5000+ | CNY2.900 (CNY3.277) |
Product Information
Product Overview
The IRLR120NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Fast switching
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
- Logic level
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
10A
TO-252AA
10V
39W
175°C
-
No SVHC (25-Jun-2025)
100V
0.185ohm
Surface Mount
2V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate